Alper YanilmazÖzhan ÜnverdiCem CelebiYanilmaz, AlperÜnverdi, ÖzhanÇelebi, Cem2025-10-06202509478396, 143206300947-83961432-063010.1007/s00339-025-08298-02-s2.0-85218192841https://www.scopus.com/inward/record.uri?eid=2-s2.0-85218192841&doi=10.1007%2Fs00339-025-08298-0&partnerID=40&md5=90bac9d1222ef1956d33b24fd783b2abhttps://gcris.yasar.edu.tr/handle/123456789/8027https://doi.org/10.1007/s00339-025-08298-0We fabricated 4 × 4 pixel two-dimensional (2D) photodiode array (PDA) out of monolayer graphene and n-type silicon (n-Si) electrodes on a silicon-on-insulator (SOI) substrate. Our device design is based on passive matrix sensor array architecture consisting of individual graphene and silicon electrodes aligned perpendicular to each other. I-V measurements conducted at room temperature to reveal the electronic characteristics of graphene and Si junction in the device structure. The spectral responsivity respond speed and the optical crosstalk of each G/Si pixels in the array have been determined by wavelength resolved and time dependent photocurrent spectroscopy measurements. Micro-Raman mapping measurements were conducted to examine the surface coverage of graphene electrode on each pixel. The results of Micro-Raman mapping measurements were correlated with the corresponding photocurrent data acquired under light illumination. We believe that this work constitutes a significant potential in integrating variety of 2D materials and SOI technology into next generation image sensing and multiple pixel light detection applications. © 2025 Elsevier B.V. All rights reserved.Englishinfo:eu-repo/semantics/openAccess2d Photodiode Array, Graphene, Imaging Sensors, Optoelectronic Devices, Passive Matrix Element, Schottky Junction, Silicon-on-insulator, Graphene Devices, Iii-v Semiconductors, Mapping, Photodiodes, Schottky Barrier Diodes, Silicon Sensors, Silicon Wafers, Graphenes, Imaging Sensors, Matrix Elements, Optoelectronics Devices, Passive Matrix, Passive Matrix Element, Photodiode Arrays, Schottky Junctions, Silicon On Insulator, Two-dimensional, Two-dimensional Photodiode Array, Silicon On Insulator TechnologyGraphene devices, III-V semiconductors, Mapping, Photodiodes, Schottky barrier diodes, Silicon sensors, Silicon wafers, Graphenes, Imaging sensors, Matrix elements, Optoelectronics devices, Passive matrix, Passive matrix element, Photodiode arrays, Schottky junctions, Silicon on insulator, Two-dimensional, Two-dimensional photodiode array, Silicon on insulator technologyPassive Matrix ElementImaging SensorsSilicon-on-insulatorOptoelectronic Devices2D Photodiode ArraySchottky JunctionGrapheneArticle