Mehmet FidanG. DönmezAlper YanilmazÖzhan ÜnverdiCem Celebi2025-10-062022135044951350-449510.1016/j.infrared.2022.104165https://www.scopus.com/inward/record.uri?eid=2-s2.0-85127769892&doi=10.1016%2Fj.infrared.2022.104165&partnerID=40&md5=113450c6a48da9b70d58ab2fc0971f7fhttps://gcris.yasar.edu.tr/handle/123456789/8704The impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element. © 2022 Elsevier B.V. All rights reserved.EnglishCvd Graphene, Near-infrared Photodiode, Open-circuit Voltage, Schottky Barrier, Shockley-read-hall Recombination, Graphene, Heterojunctions, Incident Light, Infrared Devices, Interface States, Photodiodes, Schottky Barrier Diodes, Silicon, Timing Circuits, Cvd Graphene, Light-induced, Near-infrared Photodiodes, Open-circuit Voltages, P-type, Schottky Barriers, Schottky-barrier Heights, Shockley-read-hall Recombinations, Si-based, Transport Measurements, Open Circuit VoltageGraphene, Heterojunctions, Incident light, Infrared devices, Interface states, Photodiodes, Schottky barrier diodes, Silicon, Timing circuits, CVD graphene, Light-induced, Near-infrared photodiodes, Open-circuit voltages, P-type, Schottky barriers, Schottky-barrier heights, Shockley-Read-Hall recombinations, Si-based, Transport measurements, Open circuit voltageLight-induced modification of the Schottky barrier height in graphene/Si based near-infrared photodiodesArticle