M. FidanG. DonmezA. YanilmazO. UnverdiC. CelebiDonmez, G.Fidan, M.Celebi, C.Yanilmaz, A.Unverdi, O.2025-10-0620221350-44951879-027510.1016/j.infrared.2022.1041652-s2.0-85127769892http://dx.doi.org/10.1016/j.infrared.2022.104165https://gcris.yasar.edu.tr/handle/123456789/7172https://doi.org/10.1016/j.infrared.2022.104165The impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based nearinfrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.Englishinfo:eu-repo/semantics/closedAccessCVD graphene, Schottky barrier, Near-infrared photodiode, Open -circuit voltage, Shockley-Read-Hall recombinationPERFORMANCE, EFFICIENCYCVD GrapheneNear-Infrared PhotodiodeSchottky BarrierOpen -Circuit VoltageShockley-Read-Hall RecombinationOpen-Circuit VoltageArticle