Ala K. JehadÖzhan ÜnverdiCem CelebiUnverdi, OzhanCelebi, CemJehad, Ala K.2025-10-062023092583880925-83881873-466910.1016/j.jallcom.2023.1722882-s2.0-85173158244https://www.scopus.com/inward/record.uri?eid=2-s2.0-85173158244&doi=10.1016%2Fj.jallcom.2023.172288&partnerID=40&md5=c3eb688ad47552d171c64cc21bdbb93ahttps://gcris.yasar.edu.tr/handle/123456789/8364https://doi.org/10.1016/j.jallcom.2023.172288A self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a p-i-n like-structure with high voltage response has been fabricated to detect and measure low intensity ultraviolet (UV) radiation. Bilayer graphene sheet grown by chemical vapor deposition (CVD) method was transferred on the top of an epilayer structure of n-/n+ 4 H-SiC. In this structure two Schottky contacts were formed: one at G/ n- 4H-SiC interface and the other at bulk-4 H-SiC/Cr/Au interface. The photodetector's characteristic measurements revealed low dark current of ∼ 0.58 nA and spectral voltage responsivity of ∼ 0.75 V/W at 300 nm wavelength. Under low level UV illumination of 300 nm wavelength the photodetector exhibited a leakage current and a photogenerated response voltage of 1.1 nA and 10 mV respectively. The time-dependent photovoltage measurements displayed a rapid photovoltage response with rise and decay times of ∼74 ns and ∼ 580 ns respectively. This novel device holds promise for applications requiring sensitive and self-powered UV detection. © 2023 Elsevier B.V. All rights reserved.Englishinfo:eu-repo/semantics/closedAccessCvd-graphene, Epitaxial 4 H-sic, Response Speed, Spectral Voltage Responsivity, Uv Photodetector, Chemical Vapor Deposition, Graphene, Photodetectors, Photons, Chemical Vapor Deposition Graphene, Epitaxial 4 H-sic, High-voltages, Level Detections, Response Speed, Self-powered, Spectral Voltage Responsivity, Ultra-violet Photodetectors, Voltage Response, Voltage Responsivity, Silicon CarbideChemical vapor deposition, Graphene, Photodetectors, Photons, Chemical vapor deposition graphene, Epitaxial 4 H-SiC, High-voltages, Level detections, Response speed, Self-powered, Spectral voltage responsivity, Ultra-violet photodetectors, Voltage response, Voltage responsivity, Silicon carbideEpitaxial 4 H-SiCResponse SpeedSpectral Voltage ResponsivityUV PhotodetectorCvd-grapheneArticle