Mehmet FidanÖzhan ÜnverdiCem CelebiFidan, Mehmetcelebi, Cemuenverdi, OezhanÜnverdi, Özhan2025-10-0620220883184281073421010734-21011520-855910.1116/6.00017582-s2.0-85129195830https://www.scopus.com/inward/record.uri?eid=2-s2.0-85129195830&doi=10.1116%2F6.0001758&partnerID=40&md5=1f7ba17575d52ed75f40d9909489d4f0https://gcris.yasar.edu.tr/handle/123456789/8720https://doi.org/10.1116/6.0001758The impact of the number of graphene layers on the spectral responsivity and response speed of graphene/n-type Si (Gr/n-Si)-based Schottky barrier photodiodes is investigated. Gr/n-Si photodiode devices are fabricated by transferring chemical vapor deposition-grown graphene layers one by one on n-Si substrates reaching up to three graphene layers. The devices show a clear rectifying Schottky character and have a maximum responsivity at a peak wavelength of 905 nm. Wavelength-resolved and time-dependent photocurrent measurements demonstrated that both spectral responsivity and response speed are enhanced as the number of graphene layers is increased from 1 to 3 on n-Si substrates. For example the spectral responsivity and the response speed of the fabricated device were found to be improved by about 15% (e.g. from 0.65 to 0.75 AW-1) and 50% (e.g. 14 to 7 μs) respectively when three graphene layers are used as the hole-collecting cathode electrode. The experimentally obtained results showed that the device parameters such as spectral responsivity and response speed of Gr/n-Si Schottky barrier photodiodes can be boosted simply by increasing the number of graphene layers on n-Si substrates. © 2022 Elsevier B.V. All rights reserved.Englishinfo:eu-repo/semantics/closedAccessChemical Vapor Deposition, Electrodes, Image Enhancement, Photodiodes, Schottky Barrier Diodes, Silicon, Graphene Layers, Photoresponses, Response Characteristic, Response Speed, Schottky-barrier Photodiode, Si Photodiodes, Si Substrates, Si-based, Spectral Response, Spectral Responsivity, GrapheneChemical vapor deposition, Electrodes, Image enhancement, Photodiodes, Schottky barrier diodes, Silicon, Graphene layers, Photoresponses, Response characteristic, Response speed, Schottky-barrier photodiode, Si photodiodes, Si substrates, Si-based, Spectral response, Spectral responsivity, GrapheneArticle